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1/14 www.dynexsemi.com features double side cooling high reliability in service high voltage capability fault protection without fuses high surge current capability turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications variable speed ac motor drive inverters (vsd- ac) uninterruptable power supplies high voltage converters choppers welding induction heating dc/dc converters key parameters v drm 2500v i t(av) 867a i tcm 2500a dv d /dt 1000v/s di t /dt 300a/s outline type code: h (see package details for further information) fig. 1 package outline voltage ratings type number repetitive peak off-state voltage v drm (v) repetitive peak reverse voltage v rrm (v) conditions dg646bh25 2500 16 t vj = 125c, i dm =50ma, i rrm = 50ma current ratings symbol parameter conditions max. units i tcm repetitive peak controllable on-state current v d = v drm , t j = 125c, di gq /dt = 40a/ s, c s = 6.0 f 2500 a i t(av) mean on-state current t hs = 80c, double side cooled. half sine 50hz 867 a i t(rms) rms on-state current t hs = 80c, double side cooled. half sine 50hz 1360 a dg646bh25 gate turn-off thyristor ds4092-3.1 october 2005 (ln24294)
semiconductor dg646bh25 2/14 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i tsm surge (non repetitive) on-state current 10ms half si ne. t j = 125c 18.0 ka i 2 t i 2 t for fusing 10ms half sine. t j = 125c 16.2 ma 2 s di t /dt critical rate of rise of on-state current v d = 1500v, i t = 2000a, t j = 125c, i fg > 30a, rise time > 1.0 s 300 a/ s to 66% v drm ; r gk 1.5 , t j = 125c 135 v/ s dv d /dt rate of rise of off-state voltage to 66% v drm ; v rg -2v, t j = 125c 1000 v/ s l s peak stray inductance in snubber circuit i t = 2000a, v dm = 2500v, t j = 125c, di gq /dt = 40a/ s, c s = 2.0 f 200 nh gate ratings symbol parameter test conditions min. max. units v rgm peak reverse gate voltage this value may be exceeded during turn-off - 16 v i fgm peak forward gate current 20 100 a p fg(av) average forward gate power - 15 w p rgm peak reverse gate power - 19 kw di gq /dt rate of rise of reverse gate current 30 60 a/ s t on(min) minimum permissible on time 50 - s t off(min) minimum permissible off time 100 - s thermal and mechanical ratings symbol parameter test conditions min. max. units double side cooled dc - 0.018 c/w anode dc - 0.03 c/w r th(j-hs) thermal resistance C junction to heatsink surface single side cooled cathode dc - 0.045 c/w r th(c-hs) contact thermal resistance clamping force 20.0kn with mounting compound per contact - 0.006 c/w t vj virtual junction temperature on-state (conducting) - 1 25 c t op /t stg operating junction/storage temperature range -40 125 c f m clamping force 18.0 22.0 kn
semiconductor dg646bh25 3/14 www.dynexsemi.com characteristics t j = 125c unless stated otherwise symbol parameter test conditions min . max. units v tm on-state voltage at 2000a peak, i g(on) = 7a dc - 2.6 v i dm peak off-state current v drm = 2500v, v rg = 0v - 100 ma i rrm peak reverse current at v rrm - 50 ma v gt gate trigger voltage v d = 24v, i t = 100a, t j = 25c - 1.0 v i gt gate trigger current v d = 24v, i t = 100a, t j = 25c - 3.0 a i rgm reverse gate cathode current v rgm = 16v, no gate/cathode resistor - 50 ma e on turn-on energy - 1188 mj t d delay time - 1.2 s t r rise time v d = 1500v i t = 2000a, di t /dt = 300a/ s i fg = 30a, rise time < 1.0 s - 3.0 s e off turn-off energy - 4000 mj t gs storage time - 17.0 s t gf fall time - 2.0 s t gq gate controlled turn-off time - 19.0 s q gq turn-off gate charge - 6600 c q gqt total turn-off gate charge - 13200 c i gqm peak reverse gate current i t = 2000a, v dm = 2500v, snubber capacitor c s = 2.0 f, di gq /dt = 40a/ s - 650 a
semiconductor dg646bh25 4/14 www.dynexsemi.com fig.2 maximum gate trigger voltage/current vs junct ion temperature fig.3 on-state characteristics 0 500 1000 1500 2000 2500 3000 0 1 2 3 4 5 6 snubber capacitance c s - (uf) maximum permissible turn-off current i tcm - (a) conditions: 125 o c v dm = v drm di gq /dt = 40a/us fig.4 maximum dependence of i tcm on c s fig.5 steady state sinusoidal wave conduction loss C double side cooled
semiconductor dg646bh25 5/14 www.dynexsemi.com fig.6 surge (non-repetitive) on-state current vs ti me fig.7 steady state rectangular wave conduction lo ss C double side cooled fig.8 maximum (limit) transient thermal impedance C junction to case (c/kw)
semiconductor dg646bh25 6/14 www.dynexsemi.com fig.9 turn-on energy vs on-state current fig.10 turn -on energy vs peak forward gate current fig.11 turn-on energy vs on-state current fig.12 tur n-on energy vs peak forward gate current
semiconductor dg646bh25 7/14 www.dynexsemi.com fig.13 turn-on energy vs rate of rise of on-state c urrent fig.14 delay time & rise time vs turn-on curr ent fig.15 delay time & rise time vs peak forward gate current fig.16 turn-off energy vs on-state current
semiconductor dg646bh25 8/14 www.dynexsemi.com fig.17 turn-off energy vs rate of rise of reverse g ate current fig.18 turn-off energy vs on-state current fig.19 turn-off energy vs rate of rise of reverse g ate current fig.20 turn-off energy vs on-state current
semiconductor dg646bh25 9/14 www.dynexsemi.com fig.21 gate storage time vs on-state current fig.22 gate storage time vs rate of rise of reverse gate current fig.23 gate fall time vs on-state current fig.24 ga te fall time vs rate of rise of reverse gate current
semiconductor dg646bh25 10/14 www.dynexsemi.com fig.25 peak reverse gate current vs turn-off curren t fig.26 peak reverse gate current vs rate of rise o f reverse gate current fig.27 turn-off gate charge vs on-state current fig. 28 turn-off gate charge vs rate of rise of reverse gate current
semiconductor dg646bh25 11/14 www.dynexsemi.com fig.29 rate of rise of off-state voltage vs gate ca thode resistance
semiconductor dg646bh25 12/14 www.dynexsemi.com fig.30 general switching waveforms
semiconductor dg646bh25 13/14 www.dynexsemi.com package details for further package information, please contact cus tomer services. all dimensions in mm, unless state d otherwise. do not scale. nominal weight: 820g clamping force: 20kn 10% lead length: 505mm package outline type code: h fig.31 package outline
semiconductor dg646bh25 14/14 www.dynexsemi.com power assembly capability the power assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range o f heatsink and clamping systems in line with advanc es in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power as sembly complete solution (pacs). heatsinks the power assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cool ing (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. stresses above those listed in this data sheet may cause permanent damage to the device. in extreme c onditions, as with all semiconductors, this may include potentially hazard ous rupture of the package. appropriate safety pre cautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 50 0020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom. this publication is issued to provide information only wh ich (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. no warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. the company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. all products and materials ar e sold and services provided subject to the companys conditions of sale, which are ava ilable on request. all brand names and product names used in this publicatio n are trademarks, registered trademarks or trade names of their respective owners.

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